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preliminary datasheet dual 1.1mhz, 800ma synchronous dc-dc bu ck converter AP3422 feb. 2013 rev. 1. 2 bcd semiconductor manufacturing limited 1 general description the AP3422 contains two independent 1.1mhz fixed frequency, current mode, pwm synchronous buck (step-down) dc-dc converters, each of them is capable of driving a 800ma load with high efficiency, excellent line and load regulation. each converter integrates a main switch and a synchronous switch without an external schottky diode. it is ideal for powering portable equipment that runs from a single li-ion battery. a standard series of indu ctors are available from several different manufacturers optimized for use with the AP3422. this feature greatly simplifies the design of switch-mode power supplies. this ic is available in dfn-33-10 package. features ? high efficiency: up to 95% ? output current on each channel: 800ma ? input voltage range: 2.5v to 5.5v ? fixed 1.1mhz frequency ? 100% duty cycle in dropout ? built-in short circuit protection ? built-in thermal shutdown function ? built-in current limit function ? shutdown current: <1 a applications ? gps ? wifi card ? portable media player ? digital still and video cameras figure 1. package type of AP3422 dfn-33-10
preliminary datasheet dual 1.1mhz, 800ma synchronous dc-dc bu ck converter AP3422 feb. 2013 rev. 1. 2 bcd semiconductor manufacturing limited 2 pin configuration dn package (dfn-33-10) pin 1 mark 1 2 3 4 56 7 8 9 10 figure 2. pin configurat ion of AP3422 (top view) pin description pin number pin name function 1 en1 channel 1 enable control input. drive en1 above 1.5v to turn on the channel 1. drive en1 below 0.6v to turn it off (shutdown current < 0.1a) 2 fb1 channel 1 feedback input. connect fb1 to the center point of the external resistor divider. the feedback voltage is 0.6v 3 vin2 channel 2 supply input. bypass to gnd with a 10f or greater ceramic capacitor 4 gnd2 ground 2 5 sw2 channel 2 power switch output. inductor connection to drains of the internal pfet and nfet switches 6 en2 channel 2 enable control input. drive en2 above 1.5v to turn on the channel 2. drive en2 below 0.6v to turn it off (shutdown current < 0.1a) 7 fb2 channel 2 feedback input. connect fb2 to the center point of the external resistor divider. the feedback voltage is 0.6v 8 vin1 channel 1 supply input. bypass to gnd with a 10f or greater ceramic capacitor 9 gnd1 ground 1 10 sw1 channel 1 power switch output. inductor connection to drains of the internal pfet and nfet switches
preliminary datasheet dual 1.1mhz, 800ma synchronous dc-dc bu ck converter AP3422 feb. 2013 rev. 1. 2 bcd semiconductor manufacturing limited 3 functional block diagram shutdown control slope compensation oscillator v ref with soft-start pwm comparator control logic current limit detector current sense driver over temperature detector error amplifier 0.6v en1, en2 vin1, vin2 sw1, sw2 gnd1, gnd2 fb1, fb2 1, 6 8, 3 2, 7 10,5 9, 4 figure 3. functional block diagram of AP3422 (diagram represents ? of the AP3422) ordering information AP3422 - circuit type package dn: dfn-3 3-10 package temperature range part number marking id packing type dfn-33-10 -40 to 85 oc AP3422dntr-g1 bdc tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. g1: green tr: tape & reel
preliminary datasheet dual 1.1mhz, 800ma synchronous dc-dc bu ck converter AP3422 feb. 2013 rev. 1. 2 bcd semiconductor manufacturing limited 4 absolute maximum ratings (note 1) parameter symbol value unit input voltage v in1, v in2 -0.3 to 6 v feedback voltage v fb1, v fb2 -0.3 to v in +0.3 v en1, en2 pin voltage v en1, v in2 -0.3 to v in +0.3 v sw1, sw2 pin voltage v sw1, v sw2 -0.3 to v in +0.3 v thermal resistance ja 50 oc/w operating junction temperature t j 150 oc storage temperature t stg -65 to 150 oc lead temperature (soldering, 10sec) t lead 260 oc note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit input voltage v in1, v in2 2.5 5.5 v maximum output current i out1 (max), i out2 ( max ) 800 ma operating ambient temperature t a -40 85 oc
preliminary datasheet dual 1.1mhz, 800ma synchronous dc-dc bu ck converter AP3422 feb. 2013 rev. 1. 2 bcd semiconductor manufacturing limited 5 electrical characteristics v in1 =v in2 =v en1 =v en2 =3.6v, t a =25 , unless otherwise specified. specifications with boldface type apply over full operating temperature range from -40 to 85oc. parameters symbol conditions min typ max unit supply current on each converter i cc v fb =0.55v 400 600 a shutdown supply current on each converter i shdn v en =0v, v in =5.5v 0.01 1 a under voltage lockout threshold v uvlo rising edge 2.27 v under voltage lockout hysteresis v huvlo 200 mv feedback bias current i fb v fb =0.65v -50 0.5 50 na feedback voltage v fb i out =100ma 0.588/ 0.582 0.600 0.612/ 0.618 v maximum output current i out (max) v in =2.5v, v out =0.9v 800 ma v in =3.6v, v out =1.2v 800 v in =4.6v, v out =3.3v 800 switch current limit i lim v fb =0.55v 0.95 1.25 a oscillator frequency f osc 0.8 1.1 1.4 mhz en pin threshold v enl 0.6 v v enh 1.5 en pin input leakage current i h v en =3.6v -0.1 0.1 a i l v en =0v -0.1 0.1 a internal pfet on resistance r dsonp i sw =100ma 0.44 ? internal nfet on resistance r dsonn i sw =-100ma 0.29 ? maximum duty cycle d max v fb =0.55v 100 % soft-start time t ss v en =0v to v in i out 50ma 220 s thermal shutdown threshold t otsd 160 oc thermal shutdown hysteresis t hys 30 oc
preliminary datasheet dual 1.1mhz, 800ma synchronous dc-dc bu ck converter AP3422 feb. 2013 rev. 1. 2 bcd semiconductor manufacturing limited 6 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.8 0.9 1.0 1.1 1.2 1.3 1.4 frequency (mhz) input voltage (v) v in =3.6v v out1 =1.8v i out =0a -60 -40 -20 0 20 40 60 80 100 120 140 160 0.2 0.3 0.4 0.5 0.6 0.7 v in =3.6v v fb =0.55v supply current (ma) temperature ( o c) -60 -40 -20 0 20 40 60 80 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v in =3.6v v fb =0.55v current limit (a) temperature ( o c) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v in =3.6v v out1 =1.8v output voltage (v) output current (a) typical performance characteristics l1=l2=10 h, c in1 =c in2 =c out1 =c out2 =10 f, t a =25 oc , unless otherwise noted. figure 4. frequency vs. input voltage figure 5. supply current vs. temperature figure 6. current limit vs. temperature figure 7. output voltage vs. output current
preliminary datasheet dual 1.1mhz, 800ma synchronous dc-dc bu ck converter AP3422 feb. 2013 rev. 1. 2 bcd semiconductor manufacturing limited 7 -60 -40 -20 0 20 40 60 80 100 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 normalized feedback voltage ( % ) temperature ( o c) v in =3.6v v out1 =1.8v typical performance characteristics (continued) l1=l2=10 h, c in1 =c in2 =c out1 =c out2 =10 f, t a =25 oc , unless otherwise noted. figure 8. normalized feedback voltage vs. temperature figure 9. efficiency vs. output current time 200 s/div time 1 s/div v out1 200mv i out1 500ma i out2 500ma v out2 200mv v out2 20mv v out1 20mv v sw1 5v v sw2 5v figure 10. load transient (v in =4.2v, v out1 =1.8v, v out2 =1.2v, i out1 =400ma to 800ma, i out2 =400 to 800ma) figure 11. heavy load operation (v in =4.2v, v out1 =1.8v, v out2 =1.2v, i out1 =i out2 =800ma) 0 200 400 600 800 50 60 70 80 90 100 efficiency (%) output current (ma) v in =4.2v v out1 =1.8v v out2 =1.2v
preliminary datasheet dual 1.1mhz, 800ma synchronous dc-dc bu ck converter AP3422 feb. 2013 rev. 1. 2 bcd semiconductor manufacturing limited 8 typical performance characteristics (continued) l1=l2=10 h, c in1 =c in2 =c out1 =c out2 =10 f, t a =25 oc , unless otherwise noted. time 400 s/div v out1 1v v en 2v v out2 1v figure 12. start-up from shutdown (v in =4.2v, v out1 =1.8v, v out2 =1.2v, v en =0 to 3.6v, i out1 =i out2 =400ma)
preliminary datasheet dual 1.1mhz, 800ma synchronous dc-dc bu ck converter AP3422 feb. 2013 rev. 1. 2 bcd semiconductor manufacturing limited 9 typical application figure 13. typical application of AP3422
preliminary datasheet dual 1.1mhz, 800ma synchronous dc-dc bu ck converter AP3422 feb. 2013 rev. 1. 2 bcd semiconductor manufacturing limited 10 mechanical dimensions dfn-33-10 unit:mm(inch)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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